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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 381-386
http://dx.doi.org/10.1155/2001/89617

Maximum Entropy Principle within A Total Energy Scheme for Hot-carrier Transport in Semiconductor Devices

1Dipartimento di Maternatica, Universitá di Catania, viale A. Doria, Catania 6-95125, Italy
2Dipartimento di Ingegneria dell' Innovazione ed INFM, Universitá di Lecce, Via Arnesano s/n, Lecce 73100, Italy

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

By extending the maximum entropy principle within a scheme in total average energy we obtain a closed system of hydrodynamic equations for a full nonparabolic band model in which all the unknown constitutive functions are completely determined. The theory is validated by comparing hydrodynamic calculations with Monte Carlo simulations performed for bulk and submicron Si structures at 300 K. In the general framework of the moment theory a systematic study of small-signal response functions is provided.