Emerging Carbon Nanotube Electronic Circuits, Modeling, and Performance

Table 1

A comparison of modeled and measured parameters of CNT-FETs and MOSFETs.

FET Parameters	p-type CNT-FET${}^{*}$	p-type CNT-FET${}^{*}$	Bulk-Si p-MOSFET	SOI p-MOSFET
	Model [6]	Measured [2]	Measured [27]	Measured [28]
Gate Length (nm)	260	260	15	50
Gate Oxide Thickness (nm)	15	15	1.4	1.5
Threshold Voltage (V)	$-0.3$	$\mathrm{\hspace{0.17em}\hspace{0.17em}}-0.5$	$~-0.1$	$~-0.2$
Subthreshold Swing (mV/dec)	110	130	100	70
On-Current per Unit Width ($\mu$A/$\mu$m)	2000	2100	265	650

${}^{*}$Chiral Vector: $(11,9).$