Improved Switching Characteristics of Fast Power MOSFETs Applying Solder Bump Technology

<table class="table-group" id="tab3"><tr><td><table class="table"><tr><td class="thead-hr" colspan="3"><hr/></td></tr><tr class="thead"><td align="left"></td><td align="center">Flip chip assembly</td><td align="center">TO 220 assembly</td></tr><tr><td class="thead-hr" colspan="3"><hr/></td></tr><tr><td align="left">DC+-DC−</td><td align="center">8.44 nH</td><td align="center">26.5 nH</td></tr><tr><td align="left">DC+-Out</td><td align="center">5.4 nH</td><td align="center">14.0 nH</td></tr><tr><td align="left">Out-DC−  </td><td align="center">3.86 nH</td><td align="center">13.5 nH</td></tr><tr class="table-tr"><td colspan="3"><hr class="tbody-hr"/></td></tr></table></td></tr></table>

Stray inductance measurement at 200 A/<math id="M81" xmlns="http://www.w3.org/1998/Math/MathML"><mrow><mi>μ</mi></mrow></math>s.

Advances in Power Electronics

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Table 3

Table 3: Improved Switching Characteristics of Fast Power MOSFETs Applying Solder Bump Technology 