Abstract

A comparative analysis has been made of selective grain growth processes at different layers of a grain oriented silicon iron sheet. Shorter incubation time and best orientation selection during secondary recrystallization appear at 40 μm from the sheet surface. This has been linked to the presence of a relatively strong <001>//RD fiber in the texture. The differences through the sheet thickness are assumed to be inherited from the hot band. Computer simulations in the framework of the statistical theory of grain growth support the proposed selection mechanisms.