Journal of Atomic, Molecular, and Optical Physics
Volume 2011 (2011), Article ID 270540, 7 pages
Bandgap Engineering in ZnO By Doping with 3d Transition Metal Ions
1Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025, India
2Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
Received 6 November 2010; Accepted 21 February 2011
Academic Editor: Robert Moshammer
Copyright © 2011 D. Paul Joseph and C. Venkateswaran. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Citations to this Article [15 citations]
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- K. L. Foo, U. Hashim, C. H. Voon, Mohammad Kashif, and Md. Eaqub Ali, “Au decorated ZnO thin film: application to DNA sensing,” Microsystem Technologies-Micro-And Nanosystems-Information Storage And Processing Systems, vol. 22, no. 4, pp. 903–910, 2016.
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