Concentration and Annealing Effects on Luminescence Properties of Ion-Implanted Silica Layers
Figure 5
Room temperature CL spectra of (a) Pb+, (b) Sn+, (c) Ge+ implanted SiO2 layers with thicknesses nm and implantation doses cm−2. After ion implantation, the samples were thermally post-annealed at °C.
