Concentration and Annealing Effects on Luminescence Properties of Ion-Implanted Silica Layers

<table>STEM cross-section images of Ge<sup>+</sup>-implanted SiO<sub>2</sub> layers showing cluster growth with increasing annealing temperatures <svg height="15.8375" id="M24" style="vertical-align:-3.3907pt" version="1.1" viewbox="0 0 18.0875 15.8375" width="18.0875" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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Journal of Atomic and Molecular Physics

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Figure 7

Figure 7: Concentration and Annealing Effects on Luminescence Properties of Ion-Implanted Silica Layers 