DC Conduction and Switching Mechanisms in Electroformed Al/ZnTe:V/Cu Devices at Atmospheric Pressure

<table><i>I-V</i> curves for Al/ZnTe:V/Cu structure of composition 2.5 wt% V at different thickness:  (●) 100 nm,  (■) 150 nm,  and (▲) 200 nm.</table>

International Scholarly Research Notices

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Figure 3

Figure 3: DC Conduction and Switching Mechanisms in Electroformed Al/ZnTe:V/Cu Devices at Atmospheric Pressure 