A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching
Figure 1
As-grown surface of GaN epilayer before (a) and after (b) 3-min etching in KOH + NaOH eutectic flux (E-etchant) at 540°C. Only hexagonal-shaped etch pits are observed. The EPD in (b) is cm−2. The arrows denote the reference dent at the edge of the substrate. The darkish area in (b) is an artifact of the SEM exposition.
