A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching
Figure 2
The etch pattern of HVPE GaN epilayer after 2-min E-etching at 540°C. The A pits are ascribed to the screw dislocations (the EPDA is cm−2), the middle-size B pits–to the mixed ( cm−2), and the smallest C pits–to the edge dislocations ( cm−2).
