A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching

<table>Nanopipe in HVPE GaN epilayer after 7 min etching at 580°C in EI-flux. The submicron-scale opening is visible at the bottom of the pit.</table>

International Scholarly Research Notices

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Figure 3

Figure 3: A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching 