Research Article
A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching
Table 1
Results of the XRD measurements and etching experiments.
| Sample number | Layer thickness m | 108 cm−2 | 108 cm−2 | (XRD) 108 cm−2 | (Etch) 108 cm−2 | / (Etch/XRD) | / (total/screw) |
| 1 (undoped) | 5.0 | 4 | 6.4 | 10.4 | 12.0 | 1.15 | 2.6 | 2 (Mg-doped) | 6.2 | 3.3 | 6.2 | 9.8 | 10.1 | 1.03 | 3.0 | 3 (undoped) | 16.3 | 2.0 | 5.1 | 7.1 | 7.1 | 1.00 | 3.6 | 4 (undoped) | 21.0 | 1.1 | 3.7 | 4.8 | 5.0 | 1.04 | 4.4 |
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