International Scholarly Research Notices

Research Article

A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching

Table 1

Results of the XRD measurements and etching experiments.
Sample numberLayer thickness 𝜇 m 𝜌 X R D s c r e w 108 cm−2 𝜌 X R D e d g e 108 cm−2 𝜌 X R D t o t a l (XRD) 108 cm−2 𝜌 E P D t o t a l (Etch) 108 cm−2 𝜌 E P D t o t a l / 𝜌 X R D t o t a l (Etch/XRD) 𝜌 X R D t o t a l / 𝜌 X R D s c r e w (total/screw)
1 (undoped)5.046.410.412.01.152.6
2 (Mg-doped)6.23.36.29.810.11.033.0
3 (undoped)16.32.05.17.17.11.003.6
4 (undoped)21.01.13.74.85.01.044.4