Magnetic Mn-Doped Ge Nanostructures

<table>80 nm thick Mn-doped Ge grown on Si at 250°C, (a) as-grown film and (b) after 400°C annealing at for 30 min. Stacking faults are marked by arrows.</table>

International Scholarly Research Notices

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Figure 2

Figure 2: Magnetic Mn-Doped Ge Nanostructures 