Research Article
Development of Laser-Produced Tin Plasma-Based EUV Light Source Technology for HVM EUV Lithography
Table 4
Characteristics of target formation between psec and nsec.
| | Units | | |
| Pulse duration | Sec. | 10 pico | 10 nano | Pulse energy | mJ | 2.0 | 2.7 | Delay time between pre pulse laser and CO2 laser | au. | 1 and 2 | 1 and 2 | | Shape of laser side: dome shape of opposite side: dish | Shape of laser side: dish Shape of opposite side: dish |
Characteristic of target formation | Target formation scheme; shift to opposite side of lasers incident translation speed: slow | Target formation scheme: shift to opposite side of lasers incident translation speed: fast | | Target expansion speed in diameter: fast Dispersion of target: fine | Target expansion speed in diameter: slow Dispersion of target: coarse |
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