Pentacene Active Channel Layers Prepared by Spin-Coating and Vacuum Evaporation Using Soluble Precursors for OFET Applications
Figure 6
Drain current, , versus drain voltage, , as a function of gate voltage, , for an OFET with pentacene formed (a) from heat-treated SAP, (b) from heat-treated DMP precursors, and (c) by vacuum deposition. Channel width of 10 mm and channel length of 20 μm were defined by gold source and drain electrodes. (d), (e), and (f) are plots of versus for V and versus in the saturation regime for the devices in (a), (b), and (c).
