Design and Simulation of Multiquantum-Well AlGaAs/GaAs Single Junction Solar Cell with Back Surface Reflector

<table>Average electron temperature distribution in single QW Al<sub>0.34</sub>Ga<sub>0.66</sub>As/GaAs p-i-n cell at different energy relaxation lifetime at the forward bias of 1.3 V.</table>

International Scholarly Research Notices

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Figure 7

Figure 7: Design and Simulation of Multiquantum-Well AlGaAs/GaAs Single Junction Solar Cell with Back Surface Reflector 