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International Scholarly Research Notices
Table of Contents
International Scholarly Research Notices
/
2013
/
Article
/
Tab 1
/
Research Article
Leakage Power Analysis of Domino XOR Gate
Table 1
Normalized subthreshold and gate oxide leakage currents of the low-
and high-
transistors at two different temperatures [
14
].
nMOS
pMOS
Low-
High-
Low-
High-
(110°C)
22.3
2.6
16.01
1.0
(110°C)
3.3
0.05
0.097
0.0003
(25°C)
3.7
1.9
3.1
1.0
(25°C)
9.4
0.15
0.31
0.001