Thermal boundary conductances at the two different dislocation dense GaSb/GaAs interfaces from our previous work [23]. These interfaces have dislocation densities ranging from – dislocations cm⁻² and 10⁹–10¹¹ dislocations cm⁻². For comparison, the plot includes previously measured data at TiN/MgO [29] and Bi/diamond [30] interfaces. DMM calculations are shown for the GaSb/GaAs interfaces, which drastically overpredict the measured data since the traditional formulation of the DMM does not account for dislocations interfaces. It is also interesting to note that roughly a two order of magnitude change in dislocation density only leads to a factor of two change in thermal boundary conductance.