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International Scholarly Research Notices
Table of Contents
International Scholarly Research Notices
/
2013
/
Article
/
Tab 1
/
Research Article
On the Problem of Metal-Insulator Transitions in Vanadium Oxides
Table 1
The effective Bohr radius
and the critical carrier density for an MIT in some compounds (numbers of rows in the table correspond to numbers of points in Figure
2
).
No.
Material
, nm
, 10
17
cm
−3
References
1
Si : P
1.35
30
[
7
,
10
]
2
Si : B
1.41
41
3
Si : Bi
0.88
140
4
Ge : Sb
4.74
1.5
5
n-GaAs
9.67
0.12
6
n-InSb
57.7
0.001
7
CdS : In
3.5
2.5
8
CdS : Cl
3.3
9.9
9
GaP : Zn
1.1
130
10
Cu : Ar
0.09
11
YBa
2
Cu
3
O
7
0.45
1800
12
NH
3
: Na
0.8
340
13
VO
2
1.8
28
[
7
,
12
]
14
V
2
O
3
1.18
100
[
7
]
15
V
2
O
3
(AFI)
~1.2
0.021
[
7
]
16
SmS
0.73
(*)
700 [
15
,
16
]
[
15
–
18
]
17
0.97
30
[
19
]
For
[
17
] and
[
18
].
