Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout

<table class="figure-group"><tr class="fig-image" id="a"><td><object data="https://static.hindawi.com/articles/isrn/volume-2014/145759/figures/145759.fig.001a.svgz" name="145759.fig.001a" type="image/svg+xml"></object></td></tr><tr class="fig-caption"><td><b>(a) </b>DGA n-MOSFET layout</td></tr><tr class="fig-image" id="b"><td><object data="https://static.hindawi.com/articles/isrn/volume-2014/145759/figures/145759.fig.001b.svgz" name="145759.fig.001b" type="image/svg+xml"></object></td></tr><tr class="fig-caption"><td><b>(b) </b>Standard n-MOSFET layout</td></tr></table>

<div>(a) DGA n-MOSFET layout and (b) standard n-MOSFET layout.</div>

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Figure 1

Figure 1: Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout 