Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout

<div>The transistor with a trapezoidal channel shape. <svg height="12.3115pt" id="M13" style="vertical-align:-3.31355pt" version="1.1" viewbox="-0.0498162 -8.99795 15.4138 12.3115" width="15.4138pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.0135,0,0,-0.0135,0,0)"><path d="M541 160L512 170C485 116 462 88 439 67C411 41 376 35 318 35C272 35 238 37 224 48C207 61 205 85 212 121L290 533C305 611 308 615 391 622L397 650H139L133 622C217 615 221 612 206 533L126 118C111 41 103 34 23 26L17 0H474C489 31 528 124 541 160Z" id="g113-77"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="553" vert-adv-y="553"></glyph.data></g><g transform="matrix(.0095,0,0,-0.0095,8.644,3.264)"><path d="M655 676H628C608 656 600 650 571 650H156C118 650 114 651 102 676H77C63 615 45 548 24 485L60 486C81 531 97 562 114 580C134 603 148 611 252 611H308L217 127C201 41 196 38 105 32L98 0H384L393 32C300 38 288 41 304 127L393 611H466C553 611 571 604 582 580C592 559 597 530 595 485L630 489C636 548 645 624 655 676Z" id="g50-85"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="673" vert-adv-y="673"></glyph.data></g></svg>, <svg height="12.3115pt" id="M14" style="vertical-align:-3.31355pt" version="1.1" viewbox="-0.0498162 -8.99795 18.0112 12.3115" width="18.0112pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.0135,0,0,-0.0135,0,0)"><path d="M962 650H739L732 622L760 619C812 613 819 604 798 552C760 457 671 267 606 131H604L511 638H480L237 131H233L183 554C177 607 183 614 226 619L248 622L257 650H24L17 622C88 615 92 611 103 524L173 -11H203L450 491H453L543 -11H575L839 529C882 609 886 613 953 622L962 650Z" id="g113-88"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="974" vert-adv-y="974"></glyph.data></g><g transform="matrix(.0095,0,0,-0.0095,11.232,3.264)"><path d="M655 676H628C608 656 600 650 571 650H156C118 650 114 651 102 676H77C63 615 45 548 24 485L60 486C81 531 97 562 114 580C134 603 148 611 252 611H308L217 127C201 41 196 38 105 32L98 0H384L393 32C300 38 288 41 304 127L393 611H466C553 611 571 604 582 580C592 559 597 530 595 485L630 489C636 548 645 624 655 676Z" id="g50-85"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="673" vert-adv-y="673"></glyph.data></g></svg>, and  <svg height="9.89089pt" id="M15" style="vertical-align:-0.2129898pt" version="1.1" viewbox="-0.0498162 -9.6779 6.8719 9.89089" width="6.8719pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.0135,0,0,-0.0135,0,0)"><path d="M475 507C475 612 440 712 326 712C139 712 23 420 23 215C23 96 58 -12 180 -12C369 -12 475 293 475 507ZM391 522C391 486 387 448 379 394H126C155 538 222 677 310 677C386 677 391 571 391 522ZM373 346C344 193 283 22 189 22C126 22 106 114 106 196C106 243 111 293 118 346H373Z" id="g113-230"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="498" vert-adv-y="498"></glyph.data></g></svg> are the channel length, half of the source side channel width, and corner angle, respectively.</div>

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Figure 3

Figure 3: Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout 