Research Article
Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout
Figure 4
Approximated channel shapes of the DGA n-MOSFET: (a) when , (b) when , and (c) when . , , , and are the channel length, channel width, extended width, and corner angle, respectively.
| (a) When |
| (b) When |
| (c) When |