Research Article
Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout
Figure 5
Simulated current density of the DGA n-MOSFETs at the channel surface when the gate, source, drain, and body voltages are 3.3 V, 0 V, 0.05 V, and 0 V, respectively. Current densities are presented using rainbow colors relative to its maximum current density. All and are 2 μm; increases in order of the figure number as follows: (a) 0.5 μm, (b) 1 μm, and (c) 3 μm. The white dashed lines indicate the approximated channel area when is 0.977.
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