Advances in Electrical Engineering

Research Article

Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices

Table 8

Main results on packaged power MOSFETs—implantation on the back body-drain border.
Dose [cm−2]SJ HV power MOSFETs results
[A] [ns] [nC]
5 * 1012181901756
1 * 1012202282410
5 * 1011262864056
1 * 1011344067400
Std. electrons181801800