Advances in Electrical Engineering

Research Article

Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices

Table 9

Main results on packaged power MOSFETs—implantation on the back EPY layer.
Dose [cm−2]SJ HV power MOSFETs results
[A] [ns] [nC]
5 * 1012192052058
1 * 1012232533110
5 * 1011272904200
1 * 1011354318330
Std. electrons181801800