Stress and Grain Boundary Properties of GaN Films Prepared by Pulsed Laser Deposition Technique

<table>(a) FTIR and (b) Raman spectra of a representative GaN film deposited at 873 K.</table>

International Scholarly Research Notices

Figure 5: Stress and Grain Boundary Properties of GaN Films Prepared by Pulsed Laser Deposition Technique 