Stress and Grain Boundary Properties of GaN Films Prepared by Pulsed Laser Deposition Technique
Figure 6
(a) Variation of versus for a representative GaN film deposited at 873 K. -▲-: theoretical best fit curves. (b) Variation of trap state density () and barrier height () with grain size and (c) variation of stress () with grain size (—■—) and density of trap state () (—▲—) at grain boundary region for GaN films deposited at 873 K.
