Research Article

Effect of Growth Temperature on Structural Quality of In-Rich Alloys on Si (111) Substrate by RF-MOMBE

Figure 1

(a) XRD patterns of InAlN films deposited on Si (111) at different temperatures showing varied indium compositions. (b) ω-scan XRD profile of (0002) InN at 460 to 520°C.
980206.fig.001a
(a)
980206.fig.001b
(b)