Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices

Figure 2

Example of cross section of a Super Junction HV power MOSFET. (1) Gate planar oxide; (2) body region; (3) EPY drift region; (4) back-drain contact; (5) source well-source contact; (6) polysilicon; (7) current flow; (8) metal; (9) drain column; and (10) region to be damaged by proton.