Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices

Table 2

Main results on wafer bench—implantation on the front EPI layer.

Dose [cm^−2]	SJ HV power MOSFETs results
	[A]	[ns]	[nC]	BVdss [V]
5 * 10^12	5.1	120	354	500
1 * 10^12	9.2	189	936	610
5 * 10^11	11.5	237	1466	650
1 * 10^11	21.1	400	4475	680
No irradiation	29.6	534	7582	680
Std. electrons	8.7	184	877	660