Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices

Table 4

Main results on wafer bench—implantation on the back body-drain junction.

Dose [cm^−2]	SJ HV power MOSFETs results
	[A]	[ns]	[nC]	BVdss [V]
5 * 10^12	7.7	194	747	490
1 * 10^12	10.9	271	1475	600
5 * 10^11	14.1	343	2421	640
1 * 10^11	17.3	427	3692	680
No irradiation	29.6	534	7582	680
Std. electrons	8.7	184	877	660