Research Article
Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices
Table 8
Main results on packaged power MOSFETs—implantation on the back body-drain border.
| Dose [cm−2] | SJ HV power MOSFETs results | [A] | [ns] | [nC] |
| 5 * 1012 | 18 | 190 | 1756 | 1 * 1012 | 20 | 228 | 2410 | 5 * 1011 | 26 | 286 | 4056 | 1 * 1011 | 34 | 406 | 7400 | Std. electrons | 18 | 180 | 1800 |
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