Research Article
Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices
Table 9
Main results on packaged power MOSFETs—implantation on the back EPY layer.
| Dose [cm−2] | SJ HV power MOSFETs results | [A] | [ns] | [nC] |
| 5 * 1012 | 19 | 205 | 2058 | 1 * 1012 | 23 | 253 | 3110 | 5 * 1011 | 27 | 290 | 4200 | 1 * 1011 | 35 | 431 | 8330 | Std. electrons | 18 | 180 | 1800 |
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