The <i>I</i>-<i>V</i> Characteristic Prediction of BCD LV pMOSFET Devices Based on an ANFIS-Based Methodology

<div>Predicting flow chart of <svg height="12.4257pt" id="M54" style="vertical-align:-3.427751pt" version="1.1" viewbox="-0.0498162 -8.99795 10.903 12.4257" width="10.903pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.0135,0,0,-0.0135,0,0)"><path d="M405 650H141L135 622C222 616 230 610 215 535L133 116C118 41 113 33 29 28L23 0H289L295 28C209 33 205 40 219 116L298 535C312 609 317 616 399 622L405 650Z" id="g113-74"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="428" vert-adv-y="428"></glyph.data></g><g transform="matrix(.0095,0,0,-0.0095,4.918,3.264)"><path d="M538 684C542 703 539 710 529 710C512 710 455 682 363 674L361 644H396C444 644 448 642 438 594L405 438C373 450 347 451 336 451C288 451 200 416 147 374C69 312 24 207 24 113C24 29 60 -12 94 -12C126 -12 156 4 196 30C231 53 296 100 346 166H348L328 81C311 10 325 -12 348 -12C380 -12 450 24 512 98L495 125C466 97 431 70 417 70C408 70 408 80 411 98L538 684ZM390 373L361 240C336 196 210 56 145 56C132 56 113 73 113 131C113 216 156 338 220 379C243 394 266 402 303 402C331 402 375 388 390 373Z" id="g50-101"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="564" vert-adv-y="564"></glyph.data></g></svg> values in the ANFIS.</div>

Advances in Fuzzy Systems

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Figure 2

Figure 2: The <i>I</i>-<i>V</i> Characteristic Prediction of BCD LV pMOSFET Devices Based on an ANFIS-Based Methodology 

Advances in Fuzzy Systems

The I-V Characteristic Prediction of BCD LV pMOSFET Devices Based on an ANFIS-Based Methodology

Figure 2