The I-V Characteristic Prediction of BCD LV pMOSFET Devices Based on an ANFIS-Based Methodology

Table 1

All of device geometry dimensions of different DUTs.

Group 1A								Group 1B
(μm)	0.4	0.45	0.6	0.8	1.0	1.6	2.0	(μm)	0.5	1.2	3.0
(μm)	2	2	2	2	2	2	2	(μm)	2	2	2
Group 2A								Group 2B
(μm)	0.6	0.6	0.6	0.6	0.6	0.6	0.6	(μm)	0.6	0.6	0.6
(μm)	0.5	0.55	0.6	0.8	1.0	1.6	2	(μm)	0.7	1.2	3