Table of Contents
Advances in Optical Technologies
Volume 2008, Article ID 218032, 16 pages
Review Article

Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects

1Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, USA
2Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada K1A 0R6
3Quantum Science Research, Hewlett-Packard Laboratories, Palo Alto, CA 94304, USA

Received 1 March 2008; Accepted 2 April 2008

Academic Editor: Pavel Cheben

Copyright © 2008 L. Tsybeskov et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Three-dimensional SiGe nanostructures grown on Si (SiGe/Si) using molecular beam epitaxy or low-pressure chemical vapor deposition exhibit photoluminescence and electroluminescence in the important spectral range of 1.3–1.6 𝜇m. At a high level of photoexcitation or carrier injection, thermal quenching of the luminescence intensity is suppressed and the previously confirmed type-II energy band alignment at Si/SiGe cluster heterointerfaces no longer controls radiative carrier recombination. Instead, a recently proposed dynamic type-I energy band alignment is found to be responsible for the strong decrease in carrier radiative lifetime and further increase in the luminescence quantum efficiency.