Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects

Figure 8

Polarization Raman polar diagrams in CVD grown SiGe 3D NS samples measured (a) for Si–Si, Si–Ge, and Ge–Ge vibrational modes using 458 nm excitation and (b) for the Si–Si vibrational mode using 458 and 514 nm excitation. The results obtained are compared with that of c–Si. (c) Raman spectra on a linear intensity scale in the vicinity of Si–Si vibrational modes in CVD-grown SiGe 3D NSs measured using two different polarization angles compared with that of c–Si.