Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects
Figure 9
PL spectra in CVD
grown Si/SiGe 3D NSs (a) measured at K under different excitation
intensities from Imin (0.1 W/cm2) to Imax (100 W/cm2) and (b) under a fixed excitation intensity of 5 W/cm2 at the indicated temperatures (the PL spectra have been shifted vertically for
clarity).
