Silicon Nanocrystals: Fundamental Theory and Implications for Stimulated Emission
Figure 3
Influence of doping with P, B, N on the PL intensity at 750 nm in Si NC layers synthesized by ion implantation and annealed at either 1000 or 1100°C. Samples were subsequently implanted with impurity ions and then re-annealed. The dashed line represents the intensity of the undoped reference sample. (The figures have been kindly provided by D. I. Tetelbaum, A. N. Mikhaylov, O. N. Gorshkov, D. I. Kambarov, V. K. Vasiliev, and A. I. Belov, who did the experiments).
