Light Emission from Rare-Earth Doped Silicon Nanostructures
Figure 8
PL
peak intensities of Si-ncs from the Tb:SRSO samples with various Tb
concentrations as a function of annealing temperature. The inset shows the
PL intensity of Tb3+ at 546 nm from Tb: SRSO samples after annealing
at 1200°C as a
function of Tb concentration.