On-Chip All-Optical Switching and Memory by Silicon Photonic Crystal Nanocavities
Figure 8
All-optical bistable memory operation in a silicon photonic crystal
nanocavity (end-hole shifted four-point defect cavity) realized by the
carrier-plasma nonlinearity induced by two-photon absorption in silicon. Q for the control mode is 7640, and Q for the signal mode is 12400. (a)
Injected control light consisting of a pair of set and reset pulses. (b)
Output signal intensity as a function of time for three different cases: with
no set/reset pulses (red curve), with set pulse only (green curve), and with
set and reset pulses (blue curve).
