Photonic Integration on the Hybrid Silicon Evanescent Device Platform
Figure 5
Photograph of a 2 inch III-V epitaxial transferred to an SOI sample after
C anneal for 2 hours and
selective removal of the InP substrate.
InP wafer sidewall is surrounded by Crystalbond
TM
wax to
protect InP device layer from being etched laterally during the substrate
removal step. The white region in the middle of the wafer is a reflection of the illuminator.
