Photonic Integration on the Hybrid Silicon Evanescent Device Platform

Table 2

III-V epitaxial layer structure with a 1303 nm photoluminescence peak.

Name	Composition	Doping Concentration	Thickness
P contact layer	P-type In0.53 Ga0.47As	1×10^19cm^−3	0.1 𝜇m
Cladding	P-type InP	1×10^18cm^−3	1.5 𝜇m
SCH	P-type Ai0.4055 Ga0.064 In0.5305 As, 0.9Q	1×10^17cm^−3	0.25 𝜇m
Electron blocking layer	Ai0.4764 Ga0.0189 In0.5047As	undoped	10 nm
Quantum wells	Ai0.055 Ga0.292 In0.653As, 1.0Q(9x)	undoped	10 nm
	Ai0.178 Ga0.1234 In0.0986As, 1.5Q(8x)	undoped	7 nm
N layer	N-type InP	1×10^18cm^−3	110 nm
Super lattice	N-type In0.85 Ga0.15 As0.327 P0.673, 1.1Q(2x)	1×10^18cm^−3	7.5 nm
	N-type InP (2x)	1×10^18cm^−3	7.5 nm
N bonding layer	N-type InP	1×10^18cm^−3	10 nm