Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Table 1

Different technologies used for fabricating SDLs with emission at 1150–1300 nm.

Strategies for wavelength extension to 1150–1300 nm	Challenges
GaAsSb/GaAs QW gain material [81]	Low confinement of carriers in the QWs.; Poor temperature behavior
InP-based gain with InP-based Bragg reflector [64]	Compromised reflectivity,; Increased stack thickness, low thermal conductance of the DBR
Hybrid mirrors with InP-based gain [7]	Compromised thermal conductance
Wafer fusion of different gain and active regions [82]	More expensive processing.; Two growths required for one component
InAs/GaAs QDs [83, 84]	Reduced design flexibility and low modal gain
Strain compensated high indium content InGaAs QWs [85]	Strain-related lifetime issues
Dilute nitride GaInNAs/GaAs QWs [20, 62]	Formation of nitrogen-related defects