Optimized structure for a room temperature spin-LED. The design combines a Fe/Tb-multilayer contact structure with spontaneous perpendicular magnetization, a highly efficient MgO tunnel barrier for spin injection, a minimized electron path length, and InAs QDs with enhanced spin lifetime at room temperature (a), (b) depicts the schematic energy diagram of the spin-LED in growth direction. Spin-polarized electrons will be injected from the lowest Fe layer of the Fe/Tb multilayer contact into -GaAs via the MgO tunnel barrier and recombine with unpolarized holes in the QDs.
