Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method

Table 2

Comparison of the measured values for the TD of samples.

Sample/Sample number	Porosity (%)	α (cm^2/s)	α (cm^2/s)
		Measured	Literature
Al	—	0.97	0.96–1.12
Si	—	0.87	0.85–0.97
1	62.37	0.78	—
2	72.02	0.69	—
3	76.72	0.64	—
4	79.13	0.58	—
5	79.68	0.56	—
6	80.20	0.48	—