High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes

<table>Partial pressures of N<sub>2</sub> and As<sub>2</sub> estimated from total background pressure [<a href="/journals/aot/2012/754546/#B32">32</a>].</table>

Advances in Optical Technologies

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Figure 11

Figure 11: High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes 