High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes
Figure 13
(a) SIMS depth profile of Al and N for the sample grown at various TAl values as indicated. N2 gas flowed at the indicated points. (b) Plots of Al vapor pressure and concentration of incorporated Al as functions of reciprocal temperature. The solid line indicates a linear fit on the results [33].
