High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes

<table>Dependence of <svg height="15.65" id="M9" style="vertical-align:-3.3907pt" version="1.1" viewbox="0 0 28.1 15.65" width="28.1" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.362)"><path d="M600 0h-557v24l268 633l28 8l261 -641v-24zM497 50l-194 489l-196 -489h390z" id="x394"></path></g><g transform="matrix(.017,-0,0,-.017,10.959,11.362)"><path d="M609 650l-19 -162l-30 -2q2 69 -14 94q-9 18 -28.5 26t-74.5 8h-88q-30 0 -37 -6.5t-12 -36.5l-41 -212h103q48 0 69 5.5t32 19t26 50.5h29l-40 -198h-30q2 58 -11.5 70.5t-85.5 12.5h-99l-30 -167q-17 -87 3 -101q18 -15 111 -15q59 0 89 7t54 27q8 7 15.5 16t16 21.5
l14 20.5t15 23.5t13.5 21.5l29 -10q-52 -129 -71 -163h-500l6 28q66 4 83 17.5t28 73.5l77 409q11 61 -0.5 75.5t-78.5 18.5l10 28h467z" id="x1D438"></path></g>
<g transform="matrix(.012,-0,0,-.012,21.7,15.45)"><path d="M457 332q0 -81 -41 -161.5t-105.5 -131.5t-129.5 -51q-46 0 -79 30.5t-33 86.5q0 18 7 51q18 95 46 187q6 19 6 33q0 7 -7 7q-24 0 -78 -64l-20 23q32 48 73 77t78 29q33 0 33 -46q0 -38 -10 -70q-28 -92 -39 -152q-7 -38 -7 -57q0 -78 69 -78q68 0 118 75.5t50 194.5
q0 43 -12 57q-11 12 -11 24q0 19 15 35.5t34 16.5q18 0 30.5 -34.5t12.5 -81.5z" id="x1D463"></path></g>
</svg> on the content of N in GaNAs/GaAs [<a href="/journals/aot/2012/754546/#B12">12</a>].</table>

Advances in Optical Technologies

fig3

Figure 3

Figure 3: High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes 